New Transparent Oxide Semiconductors

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New Transparent Oxide Semiconductors
New Transparent Oxide Semiconductors

Transparent conducting oxides (TCOs) have received extensive interests and demands for the application of current optoelectronic devices, such as flat panel displays, solar cell, light emitting diodes, and transparent logic devices. Although tin-doped indium oxide (ITO) has been widely regarded as the most useful TCO due to its satisfying criteria for transparent electronics, i.e., both high optical transparency (>90%) in the visible range and the high electrical conductivity, extensive efforts have been devoted to search for alternatives to ITO due to scarcity and expense of indium (In) metal. Among the various candidates, alkaline earth stannates exhibiting the perovskite crystal structures have recently attracted much attention as an earth-abundant alternative to ITO.

New Transparent Oxide Semiconductors

Deliberate introduction of point defects in next-generation oxide semiconductors can reduce mismatch-induced line defects that hinder device performance. Lanthanum-doped barium tin oxides (LBSOs) are photosensitive, transparent semiconductors with promising transistor characteristics that mysteriously slow down when grew on foreign insulating substrates. The conductivity and electron mobility of heteroepitaxial LBSO thin films can be restored by placing them in hot ovens containing water-laden hydrogen gas. X-ray data and electronic measurements revealed this approach enabled to remove small amounts of oxygen atoms from the LBSO film, creating vacant sites that interact with a different type of defect, lines of dislocated atoms that interfere with electron movement.

Related Publications
  • 1 D. Yoon, S. Yu, J. Son*, “Oxygen vacancy-assisted recovery process for increasing electron mobility in n-type BaSnO3 epitaxial thin films”, NPG Asia Materials 10, 363-371 (2018)
  • 2 S. Heo, D. Yoon, S. Yu, J. Son*, H. M. Jang*, “Non-volatile ferroelectric control of room-temperature electrical transport in perovskite oxide semiconductor La:BaSnO3”, Journal of Materials Chemistry C, 5, 11763 (2017)
  • 3 S. Yu, D. Yoon, J. Son*, “Enhancing electron mobility in La-doped BaSnO3 thin films by thermal strain to annihilate extended defects”, Applied Physics Letters, 108, 262101 (2016)
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