Functional Defects in Correlated Oxides

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Functional Defects in Correlated Oxides
Functional Defects in Correlated Oxides

The ability to control a variety of functionalities with stimuli is one of the main issues in correlated oxides and their heterostructures. Among the various stimuli, (intrinsic or extrinsic) atomic defects have a strong influence on the d-band filling, which is the core concept of correlated electronic systems.

Functional Defects in Correlated Oxides

Hydrogen, the smallest and the lightest atomic element, is reversibly incorporated into the correlated oxides, and induces electronic phase modulation. This functional defect suggests the possibility of reversible and dynamic control of topotactic phase modulation in correlated oxides and opens up the potential application in proton-based Mottronics and novel hydrogen storage.

Related Publications
  • 1 H. Yoon, M. Choi, T.-W. Lim, H. Kwon, K. Ihm, J.-K. Kim, S.-Y. Choi, J. Son*, “Reversible phase modulation and hydrogen storage in multivalent VO2 epitaxial thin films”, Nature Materials, 15, 1113 (2016)
  • 2 S. Heo, C. Oh, J. Son*, H. M. Jang, “Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3-d epitaxial thin films”, Scientific Reports, 7, 4681 (2017)
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