New Materials for Correlated Electronics

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New Materials for Correlated Electronics
New Materials for Correlated Electronics

Correlated materials with partially occupied d electrons have aroused great interest due to extreme sensitivity of electronic phase transition with external stimuli. Because of the sensitivity near the phase boundary, small changes in the crystal structures or charge density near a transition between competing phases can abruptly transform into different electronic phase, leading to large modulation in the electrical properties.

New Materials for Correlated Electronics

Metal-insulator phase transition was reversibly controlled by external electric bias. This sharp phase transition from insulator to metal is expected to be advantageous for future electronic switching, requiring sharp on and off states in device application. Therefore, the electronic devices exploiting Mott metal-insulator transition (MIT) may open up an important arena for fast and energy-efficient future electronics as a replacement of current logic and memory switch.

Related Publications
  • 1 M. Kang, J. Son*, “Off-state current reduction in NbO2-based selector device by using TiO2 tunneling barrier as an oxygen scavenger”, Applied Physics Letters, 109, 202101 (2016)
  • 2 C. Oh, S. Heo, H. M. Jang, J. Son*, “Correlated memory resistor in epitaxial NdNiO3 heterostructures with asymmetrical proton concentration”, Applied Physics Letters, 108, 122016 (2016)
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